In the present work, layer by layer depositions of p-polyaniline and n-PbS were carried out using electrodeposition and chemical bath deposition methods respectively to form a heterojunction and effect of variation of PbS and polyaniline thickness on the J-V characteristics were studied. Maximum forward bias current is observed for 0.55 µm thickness of the PbS thin films. Further keeping the constant thickness of 0.55 µm for PbS thin films polyniline thickness was optimized to get suitable forward bias current of the p-polyaniline/n-PbS heterojunction. The optimized heterojunction can be used for many applications like photocatalyst, Solar cells etc.
Article Details
Unique Paper ID: 162922
Publication Volume & Issue: Volume 10, Issue 11
Page(s): 422 - 425
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